Market Synopsis

As per the analysis by Market Research Future Reports, The Global GaN Semiconductor Devices is estimated to value 25 billion by 2023 expanding at a CAGR of 8% during the review period 2017 from 2023. GaN semiconductor is estimated to have a large demand in the power electronics sector accredited to its unique capability to control electrons more than 1000 times than silicon and is produced at a cheaper cost.

The power electronics and semiconductor markets are perpetual to add more existence and to nurture through several markets. The most important trend that the organization pays attention to is the electrification of automobiles. The adoption of electric vehicles results in a rise in technological advancement and a reduction of cost for automotive semiconductor technology. The automobile manufacturer, Lamborghini, is lessening cost in advancing electric vehicles like Terzo, (electric super sports car). wireless charging is a new trend in the semiconductor and power electronics market. Major Smartphone producers like Samsung and Apple have begun to deploy wireless charging technology in their smartphones. The enterprises also claim that development in semiconductors and power electronics can aid organizations to effectively make the battery capacity better and power management. Furthermore, surging demand for GaN semiconductors in military and space applications is expected to drive the GaN semiconductor market owing to, greater stability in radiation surroundings possessed by GaN semiconductors. Gallium nitride semiconductor devices are extensively used in different industrial sectors such as automotive, telecommunications, consumer electronics, and medical sectors.

However, the rise in demand for wireless devices, the fast development of automated equipment and the cheap cost of manufacture is estimated to affect the gallium semiconductor market during the review period. On the contrary, the dust produced during the manufacturing of GaN semiconductor poses a serious threat to human health such as irritation to human eyes, skin, and lungs, which gradually increases the shielding outfit cost is likely to obstruct the expansion of GaN semiconductor market during the review period.

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Segmentation

The gallium nitride semiconductor devices market are segregated into wafer size, type, devices, and end-user.

On the basis of type, gallium nitride semiconductor devices are sub-divided into power semiconductors, Opto semiconductors, and RF semiconductors.

On the basis of wafer size, the gallium nitride semiconductor is classified into 2 inches, 4 inches and 6 inches and more than that.

On the basis of the device, the gallium nitride semiconductor is segmented into the diode, transistor, power ICs, rectifier, supply inverter, amplifiers, power drivers, switching systems, and lighting laser.

On the basis of end-user,  the gallium nitride semiconductor is divided into aerospace defense, automotive, consumer electronics, medical, and telecommunication.

Regional Analysis

On the basis of geography, the gallium nitride (GaN) semiconductor devices are classified into Asia Pacific, North America, Europe, Latin America, and the Middle East Africa.

North America is assumed to be a potent market in the gallium nitride semiconductor devices market. The U.S. is a dominating market due to the fast advancement in the aerospace and increasing demand for semiconductor devices in offshore oil gas exploration, military, and emergency medical service providers during the review period. The APAC region is estimated to have considerable expansion in the gallium nitride semiconductor devices market. Taiwan, China, the Republic of Korea, and Japan are the dominating leaders in the gallium nitride semiconductor devices. The European market is also expected to have a considerable expansion rate during the forecast period. 

Key Players

The major competitors of gallium nitride semiconductor devices consist of Panasonic Semiconductors (Japan), Fujitsu Ltd (Japan), RF Micro Devices Corporation (U.S.), Texas Instruments  (U.S.), Cree Incorporated  (U.S.), Osram Opto-semiconductors (Germany),  Toshiba  (Japan), Infineon Technologies (Germany), Aixtron SE (Germany), Gallia Semiconductor  (Belgium),. NXP Semiconductors (U.S.), ROHM Company Limited  (Japan), Nichia Corporation (Japan), Koninklijke Philips N.V. (Netherlands), and Qorvo (U.S.).

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